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©2002 Fairchild Semiconductor CorporationRev. A1, August 2002 BC516 TO-92 Absolute Maximum Ratings T A =25°C unless otherwise noted Electrical Characteristics T A =25°C unless otherwise noted NOTES: 1. Pulse Test Pulse Width ≤ 2% 2. f T = Ih fe I · f test Thermal Characteristics T A =25°C unless otherwise noted SymbolParameterValueUnits V CEO Collector-Emitter Voltage30V V CBO Collector-Base Voltage40V V EBO Emitter-Base Voltage10V I C Collector Current- Continuous1A P D Total Power Dissipation T A = 25°C625mW T J , T STG Operating and Storage Junction Temperature Range-55 ~ +150°C SymbolParameterTest ConditionMin.Typ.Max.Units V CEO Collector-Emitter Breakdown VoltageI C = 2mA, I B = 030V V CBO Collector-Base Breakdown VoltageI C = 100μA, I E = 040V V EBO Emitter-Base Breakdown VoltageI E = 10μA, I C = 010V I CBO Collector Cutoff CurrentV CB = 30V, I E = 0100nA h FE DC Current GainI C = 20mA, V CE = 2V30,00 0 V CE (sat)Collector-Emitter Saturation VoltageI C = 100mA, I B = 0.1mA1V V BE (on)Base-Emitter On VoltageI C = 10mA, V CE = 5V1.4V f T Current Gain Bandwidth Product (2)I C = 10mA, V CE = 5V, f = 100MHz200MH Z SymbolParameterMax.Units R θJA Thermal Resistance, Junction to Ambient200°C/W R θJC Thermal Resistance, Junction to Case83.3°C/W BC516 PNP Darlington Transistor • This device is designed for applications reguiring extremely high current gain at currents to 1mA. • Sourced from process 61. 1. Collector 2. Base 3. Emitter 1