BC547A (1) datasheet pdf

1 Motorola Small–Signal Transistors, FETs and Diodes Device Data Amplifier Transistors NPN Silicon MAXIMUM RATINGS RatingSymbol BC 546 BC 547 BC 548 Unit Collector – Emitter VoltageV CEO 654530Vdc Collector – Base VoltageV CBO 805030Vdc Emitter – Base VoltageV EBO 6.0Vdc Collector Current — ContinuousI C 100mAdc Total Device Dissipation @ T A = 25°C Derate above 25°C P D 625 5.0 mW mW/°C Total Device Dissipation @ T C = 25°C Derate above 25°C P D 1.5 12 Watt mW/°C Operating and Storage Junction Temperature Range T J , T stg – 55 to +150°C THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance, Junction to Ambient R qJA 200°C/W Thermal Resistance, Junction to Case R qJC 83.3°C/W ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic SymbolMinTypMaxUnit OFF CHARACTERISTICS Collector – Emitter Breakdown VoltageBC546 (I C = 1.0 mA, I B = 0)BC547 BC548 V (BR)CEO 65 45 30 — — — — — — V Collector – Base Breakdown VoltageBC546 (I C = 100 μAdc)BC547 BC548 V (BR)CBO 80 50 30 — — — — — — V Emitter – Base Breakdown VoltageBC546 (I E = 10 mA, I C = 0)BC547 BC548 V (BR)EBO 6.0 6.0 6.0 — — — — — — V Collector Cutoff Current (V CE = 70 V, V BE = 0)BC546 (V CE = 50 V, V BE = 0)BC547 (V CE = 35 V, V BE = 0)BC548 (V CE = 30 V, T A = 125°C)BC546/547/548 I CES — — — — 0.2 0.2 0.2 — 15 15 15 4.0 nA μA Order this document by BC546/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BC546, B BC547, A, B, C BC548, A, B, C CASE 29–04, STYLE 17 TO–92 (TO–226AA) 1 2 3  Motorola, Inc. 1996 COLLECTOR 1 2 BASE 3 EMITTER REV 1

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