BC547B (1) datasheet pdf

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BC547B (1) datasheet pdf

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BC547 / BC547A / BC547B / BC547C Discrete POWER & Signal Technologies NPN General Purpose Amplifier BC547 BC547A BC547B BC547C This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted SymbolParameterValueUnits V CEO Collector-Emitter Voltage45V V CES Collector-Base Voltage50V V EBO Emitter-Base Voltage6.0V I C Collector Current - Continuous500mA T J , T stg Operating and Storage Junction Temperature Range-55 to +150 ° C SymbolCharacteristicMaxUnits BC547 / A / B / C P D Total Device Dissipation Derate above 25 ° C 625 5.0 mW mW / ° C R θ JC Thermal Resistance, Junction to Case83.3 ° C/W R θ JA Thermal Resistance, Junction to Ambient200 ° C/W E B C TO-92  1997 Fairchild Semiconductor Corporation547ABC, Rev B

Specifications
BC547 / BC547A / BC547B / BC547C Discrete POWER & Signal Technologies NPN General Purpose Amplifier BC547 BC547A BC547B BC547C This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted SymbolParameterValueUnits V CEO Collector-Emitter Voltage45V V CES Collector-Base Voltage50V V EBO Emitter-Base Voltage6.0V I C Collector Current - Continuous500mA T J , T stg Operating and Storage Junction Temperature Range-55 to +150 ° C SymbolCharacteristicMaxUnits BC547 / A / B / C P D Total Device Dissipation Derate above 25 ° C 625 5.0 mW mW / ° C R θ JC Thermal Resistance, Junction to Case83.3 ° C/W R θ JA Thermal Resistance, Junction to Ambient200 ° C/W E B C TO-92  1997 Fairchild Semiconductor Corporation547ABC, Rev B