BC808 (2) datasheet pdf

BC807, BC808 1Nov-29-2001 PNP Silicon AF Transistors
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Comlementary types: BC817, BC818 (NPN) 1 2 3 VPS05161 TypeMarkingPin ConfigurationPackage BC807-16 BC807-25 BC807-40 BC808-16 BC808-25 BC808-40 5As 5Bs 5Cs 5Es 5Fs 5Gs 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 Maximum Ratings Parameter Symbol BC807BC808 Unit Collector-emitter voltage V CEO 4525V Collector-base voltage V CBO 5030 Emitter-base voltage V EBO 55 mADC collector current500 I C Peak collector current1A I CM Base currentmA100 I B Peak base current200 I BM Total power dissipation, T S = 79 °CP tot mW330 Junction temperature150°C T j T stg Storage temperature-65 ... 150 Thermal Resistance Junction - soldering point 1) R thJS
215K/W 1 For calculation of R thJA please refer to Application Note Thermal Resistance

Specifications