BC808 (3) datasheet pdf

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Oct 22, 2025, 03:25 PM

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BC808 (3) datasheet pdf

Datasheet Information

Pages: 2

BC807 / BC808 BC807 / BC808 PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren fĂŒr die OberflĂ€chenmontage PNP Version 2015-05-12 Dimensions - Maße [mm] 1 = B 2 = E 3 = C Power dissipation – Verlustleistung310 mW Plastic case KunststoffgehĂ€use SOT-23 (TO-236) Weight approx. – Gewicht ca.0.01 g Plastic material has UL classification 94V-0 GehĂ€usematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (T A = 25°C)Grenzwerte (T A = 25°C) BC807BC808 Collector-Emitter-volt. – Kollektor-Emitter-SpannungE-B short- V CES 50 V30 V Collector-Emitter-volt. – Kollektor-Emitter-SpannungB open- V CEO 45 V25 V Emitter-Base-voltage – Emitter-Basis-SpannungC open- V EBO 5 V Power dissipation – VerlustleistungP tot 310 mW 1 ) Collector current – Kollektorstrom (dc)- I C 800 mA Peak Collector current – Kollektor-Spitzenstrom- I CM 1 A Peak Emitter current – Emitter-SpitzenstromI EM 1 A Peak Base current – Basis-Spitzenstrom- I BM 200 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur T j T S -55...+150°C -55...+150°C Characteristics (T j = 25°C)Kennwerte (T j = 25°C) Min.Typ.Max. DC current gain – Kollektor-Basis-StromverhĂ€ltnis 2 ) - V CE = 1 V, - I C = 100 mAGroup -16 Group -25 Group -40 h FE h FE h FE 100 160 250 – – – 250 400 630 - V CE = 1 V, - I C = 500 mAall groupsh FE 40–– Collector-Emitter saturation voltage – Kollektor-Emitter-SĂ€ttigungsspg. 2 ) - I C = 500 mA, - I B = 50 mA - V CEsat ––0.7 V Base-Emitter saturation voltage – Basis-Emitter-SĂ€ttigungsspannung 2 ) - I C = 500 mA, - I B = 50 mA - V BEsat ––1.3 V 1Valid, if leads are kept at ambient temperature at a distance of 2 mm from case GĂŒltig wenn die AnschlussdrĂ€hte in 2 mm Abstand vom GehĂ€use auf Umgebungstemperatur gehalten werden 2Tested with pulses t p = 300 ÎŒs, duty cycle ≀ 2% – Gemessen mit Impulsen t p = 300 ÎŒs, SchaltverhĂ€ltnis ≀ 2% © Diotec Semiconductor AGhttp://www.diotec.com/1 2 . 4 1 . 3 ± 0 . 1 1.1 +0.1 0.4 +0.1 2.9 ±0.1 1 2 3 Type Code 1.9 ±0.1 -0.05 -0.2 ± 0 . 2

Specifications
BC807 / BC808 BC807 / BC808 PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren fĂŒr die OberflĂ€chenmontage PNP Version 2015-05-12 Dimensions - Maße [mm] 1 = B 2 = E 3 = C Power dissipation – Verlustleistung310 mW Plastic case KunststoffgehĂ€use SOT-23 (TO-236) Weight approx. – Gewicht ca.0.01 g Plastic material has UL classification 94V-0 GehĂ€usematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (T A = 25°C)Grenzwerte (T A = 25°C) BC807BC808 Collector-Emitter-volt. – Kollektor-Emitter-SpannungE-B short- V CES 50 V30 V Collector-Emitter-volt. – Kollektor-Emitter-SpannungB open- V CEO 45 V25 V Emitter-Base-voltage – Emitter-Basis-SpannungC open- V EBO 5 V Power dissipation – VerlustleistungP tot 310 mW 1 ) Collector current – Kollektorstrom (dc)- I C 800 mA Peak Collector current – Kollektor-Spitzenstrom- I CM 1 A Peak Emitter current – Emitter-SpitzenstromI EM 1 A Peak Base current – Basis-Spitzenstrom- I BM 200 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur T j T S -55...+150°C -55...+150°C Characteristics (T j = 25°C)Kennwerte (T j = 25°C) Min.Typ.Max. DC current gain – Kollektor-Basis-StromverhĂ€ltnis 2 ) - V CE = 1 V, - I C = 100 mAGroup -16 Group -25 Group -40 h FE h FE h FE 100 160 250 – – – 250 400 630 - V CE = 1 V, - I C = 500 mAall groupsh FE 40–– Collector-Emitter saturation voltage – Kollektor-Emitter-SĂ€ttigungsspg. 2 ) - I C = 500 mA, - I B = 50 mA - V CEsat ––0.7 V Base-Emitter saturation voltage – Basis-Emitter-SĂ€ttigungsspannung 2 ) - I C = 500 mA, - I B = 50 mA - V BEsat ––1.3 V 1Valid, if leads are kept at ambient temperature at a distance of 2 mm from case GĂŒltig wenn die AnschlussdrĂ€hte in 2 mm Abstand vom GehĂ€use auf Umgebungstemperatur gehalten werden 2Tested with pulses t p = 300 ÎŒs, duty cycle ≀ 2% – Gemessen mit Impulsen t p = 300 ÎŒs, SchaltverhĂ€ltnis ≀ 2% © Diotec Semiconductor AGhttp://www.diotec.com/1 2 . 4 1 . 3 ± 0 . 1 1.1 +0.1 0.4 +0.1 2.9 ±0.1 1 2 3 Type Code 1.9 ±0.1 -0.05 -0.2 ± 0 . 2

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