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Semiconductor Group 1Dec-19-1996 BC 807-16W PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W (NPN) TypeMarkingOrdering CodePin ConfigurationPackage BC 807-16W5AsQ62702-C23251 = B2 = E3 = CSOT-323 BC 807-25W5BsQ62702-C23261 = B2 = E3 = CSOT-323 BC 807-40W5CsQ62702-C23271 = B2 = E3 = CSOT-323 BC 808-16W5EsQ62702-C23281 = B2 = E3 = CSOT-323 BC 808-25W5FsQ62702-C23291 = B2 = E3 = CSOT-323 BC 808-40W5GsQ62702-C23301 = B2 = E3 = CSOT-323 Maximum Ratings ParameterSymbolValuesUnit Collector-emitter voltage BC 807 W BC 808 W V CEO 25 45 V Collector-base voltage BC 807 W BC 808 W V CBO 30 50 Emitter-base voltageV EBO 5 DC collector currentI C 500mA Peak collector currentI CM 1A Base currentI B 100mA Total power dissipation, T S = 130°CP tot 250mW Junction temperatureT j 150°C Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction ambient 1) R thJA ≤ 215 K/W Junction - soldering pointR thJS ≤ 80 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu