BC808W (1) datasheet pdf

1 ) Mounted on P.C. board with 3 mm 2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm 2 Kupferbelag (Lötpad) an jedem Anschluß 4 01.11.2003 12 3 Type Code 2.1 ±0.1 2 ±0.1 1 ±0.1 1.25 ±0.1 0.3 1.3 BC 807W / BC 808WGeneral Purpose Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Power dissipation – Verlustleistung225 mW Plastic caseSOT-323 Kunststoffgehäuse Weight approx. – Gewicht ca.0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Dimensions / Maße in mm 1 = B2 = E3 = C Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (T A = 25
C)Grenzwerte (T A = 25
C) BC 807WBC 808W Collector-Emitter-voltageB open- V CE0 45 V25 V Collector-Emitter-voltageB shorted- V CES 50 V30 V Collector-Base-voltageE open- V CB0 50 V30 V Emitter-Base-voltageC open- V EB0 5 V Power dissipation – VerlustleistungP tot 225 mW 1 ) Collector current – Kollektorstrom (DC)- I C 500 mA Peak Coll. current – Kollektor-Spitzenstrom- I CM 1000 mA Peak Base current – Basis-Spitzenstrom- I BM 200 mA Peak Emitter current – Emitter-SpitzenstromI EM 1000 mA Junction temperature – SperrschichttemperaturT j 150
C Storage temperature – LagerungstemperaturT S - 65...+ 150
C Characteristics, T j = 25
CKennwerte, T j = 25
C Min.Typ.Max. DC current gain – Kollektor-Basis-Stromverhältnis - V CE = 1 V, - I C = 100 mA BC807W BC808W h FE 100–600 - V CE = 1 V, - I C = 500 mAh FE 40–– - V CE = 1 V, - I C = 100 mA Group -16Wh FE 100160250 Group -25Wh FE 160250400 Group -40Wh FE 250400600

Specifications