BC817-16 (3) datasheet pdf

BC817, BC818 1Nov-29-2001 NPN Silicon AF Transistors
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary types: BC807, BC808 (PNP) 1 2 3 VPS05161 TypeMarkingPin ConfigurationPackage BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 6As 6Bs 6Cs 6Es 6Fs 6Gs 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 Maximum Ratings Parameter Symbol BC817BC818 Unit Collector-emitter voltage V CEO 4525V Collector-base voltage V CBO 5030 Emitter-base voltage V EBO 55 DC collector current I C 500mA Peak collector current I CM 1A Base currentmA100 I B Peak base current I BM 200 Total power dissipation, T S = 79 °CP tot 330mW Junction temperature T j 150°C Storage temperature T stg -65 ... 150 Thermal Resistance Junction - soldering point 1) R thJS
215K/W 1 For calculation of R thJA please refer to Application Note Thermal Resistance

Specifications