BC817-16LT1 (1) datasheet pdf

General Purpose Transistors NPN Silicon MAXIMUM RATINGS RatingSymbolValueUnit Collector – Emitter VoltageV CEO 45V Collector – Base VoltageV CBO 50V Emitter – Base VoltageV EBO 5.0V Collector Current — ContinuousI C 500mAdc THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Total Device Dissipation FR– 5 Board, (1) T A = 25°C Derate above 25°C P D 225 1.8 mW mW/°C Thermal Resistance, Junction to Ambient R qJA 556°C/W Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C P D 300 2.4 mW mW/°C Thermal Resistance, Junction to Ambient R qJA 417°C/W Junction and Storage TemperatureT J , T stg – 55 to +150°C DEVICE MARKING BC817–16LT1 = 6A; BC817–25LT1 = 6B; BC817–40LT1 = 6C ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic SymbolMinTypMaxUnit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (I C = –10 mA) V (BR)CEO 45——V Collector – Emitter Breakdown Voltage (V EB = 0, I C = –10 μA) V (BR)CES 50——V Emitter – Base Breakdown Voltage (I E = –1.0 mA) V (BR)EBO 5.0——V Collector Cutoff Current (V CB = 20 V) (V CB = 20 V, T A = 150°C) I CBO — — — — 100 5.0 nA μA 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2.Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Thermal Clad is a registered trademark of the Bergquist Company. Order this document by BC817–16LT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BC817-16LT1 BC817-25LT1 BC817-40LT1 1 2 3 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)  Motorola, Inc. 1996 COLLECTOR 3 2 BASE 1 EMITTER