BC817U datasheet pdf

2011-09-201 BC817U 5 4 6 3 2 1 NPN Silicon AF Transistor Array • For AF stages and driver applications • High current gain • Low collector-saturation voltage • Two (galvanic) internal isolated transistors with good matching in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101 EHA07178 654 321 C1B2E2 C2B1E1 TR1 TR2 TypeMarkingPin ConfigurationPackage BC817U6Bs 1=E12=B13=C24=E25=B26=C1SC74 Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltageV CEO 45V Collector-base voltageV CBO 50 Emitter-base voltageV EBO 5 Collector currentI C 500mA Peak collector current, t p ≤ 10 msI CM 1000 Base currentI B 100 Peak base currentI BM 200 Total power dissipation- T S ≤ 115 °C P tot 330mW Junction temperatureT j 150°C Storage temperatureT stg -65 ... 150

Specifications