BC817W (1) datasheet pdf

BC817W, BC818W 1Nov-29-2001 NPN Silicon AF Transistors
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary types: BC807W, BC808W (PNP) 1 3 VSO05561 2 TypeMarkingPin ConfigurationPackage BC817-16W BC817-25W BC817-40W BC818-16W BC818-25W BC818-40W 6As 6Bs 6Cs 6Es 6Fs 6Gs 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 Maximum Ratings Parameter Symbol BC817WBC818W Unit Collector-emitter voltage V CEO 4525V Collector-base voltage V CBO 5030 Emitter-base voltage V EBO 55 DC collector current I C 500mA Peak collector current I CM 1A Base currentmA100 I B Peak base current I BM 200 Total power dissipation, T S = 130 °CP tot 250mW Junction temperature T j 150°C Storage temperature T stg -65 ... 150 Thermal Resistance Junction - soldering point 1) R thJS
80K/W 1 For calculation of R thJA please refer to Application Note Thermal Resistance

Specifications