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BC817 / BC818 — NPN Epitaxial Silicon Transistor © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC817 / BC818 Rev. 1.1.01 November 2014 BC817 / BC818 NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for AF-Driver Stages and Low Power Output Stages • Complement to BC807 / BC808 Ordering Information (1) Note: 1. Affix “-16,-25,-40” means h FE classification. Affix “-M” means the matte type package. Affix “-TF” means the tape and reel type packing. Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T A = 25°C unless otherwise noted. Part NumberMarkingPackagePacking Method BC81716MTF8FASOT-23 3LTape and Reel BC81725MTF8FBSOT-23 3LTape and Reel BC81740MTF8FCSOT-23 3LTape and Reel BC81816MTF8GASOT-23 3LTape and Reel BC81825MTF8GBSOT-23 3LTape and Reel BC81840MTF8GCSOT-23 3LTape and Reel SymbolParameterValueUnit V CBO Collector-Base Voltage BC81750 V BC81830 V CEO Collector-Emitter Voltage BC81745 V BC81825 V EBO Emitter-Base Voltage5V I C Collector Current (DC)800mA T J Junction Temperature150°C T STG Storage Temperature -65 to +150°C SOT-23 1. Base 2. Emitter 3. Collector 1 2 3