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Semiconductor Group 1Dec-19-1996 BC 817-16W NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807W, BC808W (PNP) TypeMarkingOrdering CodePin ConfigurationPackage BC 817-16W6AsQ62702-C23201 = B2 = E3 = CSOT-323 BC 817-25W6BsQ62702-C22781 = B2 = E3 = CSOT-323 BC 817-40W6CsQ62702-C23211 = B2 = E3 = CSOT-323 BC 818-16W6EsQ62702-C23221 = B2 = E3 = CSOT-323 BC 818-25W6FsQ62702-C23231 = B2 = E3 = CSOT-323 BC 818-40W6GsQ62702-C23241 = B2 = E3 = CSOT-323 Maximum Ratings ParameterSymbolValuesUnit Collector-emitter voltage BC 817 W BC 818 W V CEO 25 45 V Collector-base voltage BC 817 W BC 818 W V CBO 30 50 Emitter-base voltageV EBO 5 DC collector currentI C 500mA Peak collector currentI CM 1A Base currentI B 100mA Total power dissipation, T S = 130°CP tot 250mW Junction temperatureT j 150°C Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction ambient 1) R thJA ≤ 215 K/W Junction - soldering pointR thJS ≤ 80 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu
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