BC 846PN
Semiconductor Group
Sep-07-19981
NPN/PNP Silicon AF Transistor Array
• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Two (galvanic) internal isolated NPN/PNP
Transistors in one package
Specifications
Tape loading orientation
VPS05604
6
3
1
5
4
2
PIN Configuration
TypeMarkingPackageNPN-TransistorOrdering Code1 = E6 = C2 = B
Q62702-C2537SOT-363PNP-Transistor4 = E3 = C5 = BBC 846PN1Os
Maximum Ratings
ParameterValueSymbolUnit
VCollector-emitter voltage
V
CEO
65
Collector-base voltage80
V
CBO
Collector-emitter voltage
V
CES
V80
V
EBO
VEmitter-base voltage5
mADC collector current
I
C
100
200Peak collector current
I
CM
Total power dissipation, T
S
= 115 °C
mW
P
tot
250
T
j
150Junction temperature°C
-65...+150Storage temperature
T
stg
Thermal Resistance
Junction ambient
1)
R
thJA
≤275
K/W
Junction - soldering point
R
thJS
≤140
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm
2
Cu
Semiconductor Group11998-11-01