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BC847B / BC847C Transistors 1/1 NPN General Purpose Transistor BC847B / BC847C ! !! !Features 1) BV CEO < 45V (I C=1mA) 2) Complements the BC857B. ! !! !Package, marking, and Packaging specifications BC847C SST3 G1G T116 3000 BC847B SST3 G1F T116 3000 Part No. Packaging type Marking Code Basic ordering unit (pieces) ! !! !External dimensions (Units : mm) ROHM : SST3(1) Emitter (2) Base (3) Collector 0~0.1 0.2Min. 2.4 ± 0.2 1.3 0.95 0.45±0.1 0.15 0.4 2.9±0.2 1.9±0.2 0.95 0.95 + 0.2 − 0.1 −0.1 +0.2 +0.1 −0.06 +0.1 −0.05 (2) (1) (3) All terminals have the same dimensions ! !! !Absolute maximum ratings (Ta=25°C) ParameterSymbol V CBO VCEO VEBO IC Tj Tstg Limits 50 45 6 0.1 0.35 150 −55~+150 Unit V V V A ∗ P C 0.2 W °C °C Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Junction temperature Storage temperature Collector power dissipation ∗ When mounted on a 7×5×0.6mm ceramic board. ! !! !Electrical characteristics (Ta=25°C) Parameter Min.Typ.Max. UnitConditions 50 45 6 − − − − − − − − − − 15 5 V V V μA nA I C=50μA I C=1mA I E=50μA V CB=30V V CB=30V, Ta=150°C − 0.58 − 0.77 V −− 0.6 I C/IB=100mA/5mA −− 0.25 V I C/IB=10mA/0.5mA V CE/IC=5V/10mA V CE/IC=5V/2mA BC847B 200450 − −V CE/IC=5V/2mA BC847C 420800 − − − 200 3 − − MHz pF V CE=5V, IE=−20mA, f=100MHz V CB=−10V, IE=0, f=1MHz Symbol BV CBO BVCEO BVEBO ICBO VBE(on) VCE(sat) hFE fT Cob Cib− 8 −pFV EB=0.5V, IC=0, f=1MHz Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Base-emitter saturation voltage Collector-emitter saturation voltage DC current transfer ratio Transition frequency Collector output capacitance Emitter input capacitance ! !! !Electrical characteristic curves The electrical characteristic curves for these products are the same as those of UMT222A, SST222A, MMST2222A and PN2222A.