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4 C1 B2 E2 E1 B1 C2 pin #1 NPN Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 200 mA. Sourced from Process 07. *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. SymbolParameterValueUnits V CEO Collector-Emitter Voltage45V V CES Collector-Base Voltage50V V CBO Collector-Base Voltage50V V EBO Emitter-Base Voltage6.0V I C Collector Current - Continuous200mA T J , T stg Operating and Storage Junction Temperature Range-55 to +150 ° C 2001 Fairchild Semiconductor Corporation Rev.A1 Absolute Maximum Ratings* T A = 25°C unless otherwise noted Thermal Characteristics T A = 25°C unless otherwise noted SymbolCharacteristicMaxUnits BC847S P D Total Device Dissipation Derate above 25 ° C 300 2.4 mW mW/ ° C R θ JA Thermal Resistance, Junction to Ambient415 ° C/W BC847S SC70-6 Mark: 1C NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. BC847S