BC848AWT1 datasheet pdf

General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. MAXIMUM RATINGS RatingSymbolBC846BC847BC848Unit Collector – Emitter VoltageV CEO 654530V Collector – Base VoltageV CBO 805030V Emitter – Base VoltageV EBO 6.06.05.0V Collector Current — ContinuousI C 100100100mAdc THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Total Device Dissipation FR– 5 Board, (1) T A = 25°C P D 150mW Thermal Resistance, Junction to Ambient R qJA 833°C/W Total Device DissipationP D 2.4mW/°C Junction and Storage TemperatureT J , T stg – 55 to +150°C DEVICE MARKING BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F; BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic SymbolMinTypMaxUnit OFF CHARACTERISTICS Collector – Emitter Breakdown VoltageBC846 Series (I C = 10 mA)BC847 Series BC848 Series V (BR)CEO 65 45 30 — — — — — — V Collector – Emitter Breakdown VoltageBC846 Series (I C = 10 μA, V EB = 0)BC847 Series BC848 Series V (BR)CES 80 50 30 — — — — — — V Collector – Base Breakdown VoltageBC846 Series (I C = 10 mA)BC847 Series BC848 Series V (BR)CBO 80 50 30 — — — — — — V Emitter – Base Breakdown VoltageBC846 Series (I E = 1.0 mA)BC847 Series BC848 Series V (BR)EBO 6.0 6.0 5.0 — — — — — — V Collector Cutoff Current (V CB = 30 V) (V CB = 30 V, T A = 150°C) I CBO — — — — 15 5.0 nA μA 1. FR–5 = 1.0 x 0.75 x 0.062 in Thermal Clad is a trademark of the Bergquist Company. Order this document by BC846AWT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BC846AWT1,BWT1 BC847AWT1,BWT1, CWT1 BC848AWT1,BWT1, CWT1 CASE 419–02, STYLE 3 SOT–323/SC–70 1 2 3  Motorola, Inc. 1996 COLLECTOR 3 1 BASE 2 EMITTER