1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Specifications
General Purpose Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–323/SC–70 which is
designed for low power surface mount applications.
MAXIMUM RATINGS
RatingSymbolBC846BC847BC848Unit
Collector – Emitter VoltageV
CEO
654530V
Collector – Base VoltageV
CBO
805030V
Emitter – Base VoltageV
EBO
6.06.05.0V
Collector Current — ContinuousI
C
100100100mAdc
THERMAL CHARACTERISTICS
CharacteristicSymbolMaxUnit
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
P
D
150mW
Thermal Resistance, Junction to Ambient
R
qJA
833°C/W
Total Device DissipationP
D
2.4mW/°C
Junction and Storage TemperatureT
J
, T
stg
– 55 to +150°C
DEVICE MARKING
BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F;
BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
SymbolMinTypMaxUnit
OFF CHARACTERISTICS
Collector – Emitter Breakdown VoltageBC846 Series
(I
C
= 10 mA)BC847 Series
BC848 Series
V
(BR)CEO
65
45
30
—
—
—
—
—
—
V
Collector – Emitter Breakdown VoltageBC846 Series
(I
C
= 10 μA, V
EB
= 0)BC847 Series
BC848 Series
V
(BR)CES
80
50
30
—
—
—
—
—
—
V
Collector – Base Breakdown VoltageBC846 Series
(I
C
= 10 mA)BC847 Series
BC848 Series
V
(BR)CBO
80
50
30
—
—
—
—
—
—
V
Emitter – Base Breakdown VoltageBC846 Series
(I
E
= 1.0 mA)BC847 Series
BC848 Series
V
(BR)EBO
6.0
6.0
5.0
—
—
—
—
—
—
V
Collector Cutoff Current (V
CB
= 30 V)
(V
CB
= 30 V, T
A
= 150°C)
I
CBO
—
—
—
—
15
5.0
nA
μA
1. FR–5 = 1.0 x 0.75 x 0.062 in
Thermal Clad is a trademark of the Bergquist Company.
Order this document
by BC846AWT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BC846AWT1,BWT1
BC847AWT1,BWT1,
CWT1
BC848AWT1,BWT1,
CWT1
CASE 419–02, STYLE 3
SOT–323/SC–70
1
2
3
Motorola, Inc. 1996
COLLECTOR
3
1
BASE
2
EMITTER