BC849 (1) datasheet pdf

NPN EPITAXIAL BC846/847/848/849/850 SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for automatic insertion in thick and thin-film circuits • LOW NOISE: BC849, BC850 • Complement to BC856 ... BC860 ABSOLUTE MAXIMUM RATINGS (T A =25°°C) ELECTRICAL CHARACTERISTICS (T A =25°°C) h FE CLASSIFICATION MARKING CODE CharacteristicSymbolRatingUnit Collector Base Voltage : BC846 : BC847/850 : BC848/849 Collector Emitter Voltage : BC846 : BC847/850 : BC848/849 Emitter-Base Voltage : BC846/847 : BC848/849/850 Collector Current (DC) Collector Dissipation Junction Temperature Storage Temperature V CBO V CEO V EBO I C P C T J T STG 80 50 30 65 45 30 6 5 100 310 150 -65 ~ 150 V V V V V V V V mA mW °C °C CharacteristicSymbolTest ConditionsMinTypMaxUnit Collector Cut-off Current DC Current Gain Collector Emitter Saturation Voltage Collector Base Saturation Voltage Base Emitter On Voltage Current Gain Bandwidth Product Collector Base Capacitance Emitter Base Capacitance Noise Figure : BC846/847/848 : BC849/850 : BC849 : BC850 I CBO h FE V CE (sat) V BE (sat) V BE (on) f T C CBO C EBO NF NF V CB =30V, I E =0 V CE =5V, I C =2mA I C =10mA, I B =0.5mA I C =100mA, I B =5mA I C =10mA, I B =0.5mA I C =100mA, I B =5mA V CE =5V, I C =2mA V CE =5V, I C =10mA V CE =5V, I C =10mA f=100MHz V CB =10V, f=1MHz V EB =0.5V, f=1MHz V CE =5V, I C =200μA f=1KHz, R G =2KΩ V CE =5V, I C =200μA R G =2KΩ f=30~15000Hz 110 580 90 200 700 900 660 300 3.5 9 2 1.2 1.4 1.4 15 800 250 600 700 720 6 10 4 4 3 nA mV mV mV mV mV mV MHz pF pF dB dB dB dB ClassificationABC h FE 110-220200-450420-800 TYPE846A846B846C847A847B847C848A848B848C849A849B849C850A850B850C MARK8AA8AB8AC8BA8BB8BC8CA8CB8CC8DA8DB8DC8EA8EB8EC SOT-23 1. Base 2. Emitter 3. Collector  1999 Fairchild Semiconductor Corporation Rev. B

Specifications