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ambient temperature unless otherwise specified Pin configuration 1 = Base, 2 = Emitter, 3 = Collector. FEATURES Small Signal Transistors (NPN) 5/98 SymbolValueUnit Collector-Base Voltage BC846 BC847 BC848, BC849 V CBO V CBO V CBO 80 50 30 V V V Collector-Emitter Voltage BC846 BC847 BC848, BC849 V CES V CES V CES 80 50 30 V V V Collector-Emitter Voltage BC846 BC847 BC848, BC849 V CEO V CEO V CEO 65 45 30 V V V Emitter-Base Voltage BC846, BC847 BC848, BC849 V EBO V EBO 6 5 V V Collector CurrentI C 100mA Peak Collector CurrentI CM 200mA Peak Base CurrentI BM 200mA Peak Emitter Current–I EM 200mA Power Dissipation at T SB = 50 °CP tot 310 1) mW Junction TemperatureT j 150°C Storage Temperature RangeT S –65 to +150°C 1) Device on fiberglass substrate, see layout BC846 THRU BC849 NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. Especially suited for automatic insertion in thick- and thin-film circuits. These transistors are subdivided into three groups A, B and C according to their current gain. The type BC846 is available in groups A and B, however, the types BC847 and BC848 can be supplied in all three groups. The BC849 is a low noise type available in groups B and C. As complementary types, the PNP transistors BC856... BC859 are recommended. ♦ ♦ ♦ Marking code TypeMarking BC846A B BC847A B C 1A 1B 1E 1F 1G TypeMarking BC848A B C BC849B C 1J 1K 1L 2B 2C