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SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORSISSUE 6 - JANUARY 1997 PARTMARKING DETAILS COMPLEMENTARY TYPES BC846AñZ1A BC848Bñ1K BC846 BC856 BC846Bñ1B BC848CñZ1L BC847 BC857 BC847AñZ1E BC849Bñ2B BC848 BC858 BC847Bñ1F BC849Cñ2C BC849 BC859 BC847Cñ1GZ BC850Bñ2FZ BC850 BC860 BC848Añ1JZ BC850C-Z2G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BC846 BC847 BC848 BC849 BC850 UNIT Collector-Base Voltage V CBO 80 50 30 30 50 V Collector-Emitter Voltage V CES 80 50 30 30 50 V Collector-Emitter Voltage V CEO 65 45 30 30 45 V Emitter-Base Voltage V EBO 65V Continuous Collector Current I C 100 mA Peak Collector Current I CM 200 mA Peak Base Current I BM 200 mA Peak Emitter Current I EM 200 mA Power Dissipation at T amb =25∞C P tot 330 mW Operating and StorageTemperature Range T j :T stg -55 to +150 ∞C ELECTRICAL CHARACTERISTICS (at T amb = 25∞C unless otherwise stated). PARAMETER SYMBOL BC846 BC847 BC848 BC849 BC850 UNIT CONDITIONS. Collector Cut-Off Current I CBO Max 15 nA V CB = 30V Max 5 μ A V CB = 30V T amb =150∞C Collector-EmitterSaturation Voltage V CE(sat) TypMax. 90 250 mVmV I C =10mA, I B =0.5mA TypMax. 200600 mVmV I C =100mA, I B =5mA TypMax. 300600 mVmV I C =10mA* Base-Emitter Saturation Voltage V BE(sat) Typ 700 mV I C =10mA, I B =0.5mA Typ 900 mV I C =100mA, I B =5mA Base-Emitter Voltage V BE MinTypMax 580660700 mVmVmV I C =2mA V CE =5V Max 770 mV I C =10mA V CE =5V * Collector-Emitter Saturation Voltage at I C = 10mA for the characteristics going through the operating point I C = 11mA, V CE = 1V at constant base current. BC846 BC847BC848 BC849 BC850 C B E SOT23