BC856AT (1) datasheet pdf

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Oct 22, 2025, 03:25 PM

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BC856AT (1) datasheet pdf

Datasheet Information

Pages: 6

Jan-08-20021 BC856T PNP Silicon AF Transistor Preliminary data  For AF input stages and driver applications  High current gain  Low collector-emitter saturation voltage  Complementary types: BC 846T VPS05996 1 2 3 TypeMarkingPin ConfigurationPackage BC856AT BC856BT 3As 3Bs 1 = B 1 = B 2 = E 2 = E 3 = C 3 = C SC75 SC75 Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltageV CEO 65V Collector-base voltageV CBO 80 Collector-emitter voltageV CES 80 Emitter-base voltageV EBO 5 DC collector currentI C 100mA Peak collector currentI CM 200mA Total power dissipation, T S = 109 °C P tot 250mW Junction temperatureT j 150°C Storage temperatureT stg -65 ... 150 Thermal Resistance Junction - soldering point 1) R thJS 165K/W 1 For calculation of R thJA please refer to Application Note Thermal Resistance

Specifications
Jan-08-20021 BC856T PNP Silicon AF Transistor Preliminary data  For AF input stages and driver applications  High current gain  Low collector-emitter saturation voltage  Complementary types: BC 846T VPS05996 1 2 3 TypeMarkingPin ConfigurationPackage BC856AT BC856BT 3As 3Bs 1 = B 1 = B 2 = E 2 = E 3 = C 3 = C SC75 SC75 Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltageV CEO 65V Collector-base voltageV CBO 80 Collector-emitter voltageV CES 80 Emitter-base voltageV EBO 5 DC collector currentI C 100mA Peak collector currentI CM 200mA Total power dissipation, T S = 109 °C P tot 250mW Junction temperatureT j 150°C Storage temperatureT stg -65 ... 150 Thermal Resistance Junction - soldering point 1) R thJS 165K/W 1 For calculation of R thJA please refer to Application Note Thermal Resistance

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