BC856S datasheet pdf

BC 856S Semiconductor Group Ma -12-19981 PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two ( galvanic) internal isolated Transistors with high matching in one package VPS05604 6 3 1 5 4 2 TypeMarkingOrdering CodePin ConfigurationPackage BC 856S3DsQ62702-C25321/4=E1/E22/5=B1/B23/6=C2/C1SOT-363 Maximum Ratings Parameter ValueSymbolUnit VV CEO 65Collector-emitter voltage Collector-base voltageV CBO 80 Collector-emitter voltage80V CES 5Emitter-base voltageV EBO mAI C 100DC collector current Peak collector currentI CM 200 Total power dissipation, T S = 115 °CmW250P tot 150Junction temperature°CT j Storage temperatureT stg - 65...+150 Thermal Resistance Junction ambient 1) R thJA ≤275K/W Junction - soldering pointR thJS ≤140 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group11998-11-01

Specifications