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BC 856S Semiconductor Group Ma -12-19981 PNP Silicon AF Transistor Array ā¢ For AF input stages and driver applications ā¢ High current gain ā¢ Low collector-emitter saturation voltage ā¢ Two ( galvanic) internal isolated Transistors with high matching in one package VPS05604 6 3 1 5 4 2 TypeMarkingOrdering CodePin ConfigurationPackage BC 856S3DsQ62702-C25321/4=E1/E22/5=B1/B23/6=C2/C1SOT-363 Maximum Ratings Parameter ValueSymbolUnit VV CEO 65Collector-emitter voltage Collector-base voltageV CBO 80 Collector-emitter voltage80V CES 5Emitter-base voltageV EBO mAI C 100DC collector current Peak collector currentI CM 200 Total power dissipation, T S = 115 Ā°CmW250P tot 150Junction temperatureĀ°CT j Storage temperatureT stg - 65...+150 Thermal Resistance Junction ambient 1) R thJA ā¤275K/W Junction - soldering pointR thJS ā¤140 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group11998-11-01
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