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BC857T Nov-29-20011 PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Complementary types: BC847...T VPS05996 1 2 3 TypeMarkingPin ConfigurationPackage BC857AT BC857BT 3Es 3Fs 1 = B 1 = B 2 = E 2 = E 3 = C 3 = C SC75 SC75 Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltageV CEO 45V Collector-base voltageV CBO 50 Collector-emitter voltageV CES 50 Emitter-base voltageV EBO 5 DC collector currentI C 100mA Peak collector currentI CM 200 Total power dissipation, T S = 109 °CP tot 250mW Junction temperatureT j 150°C Storage temperatureT stg -65 ... 150 Thermal Resistance Junction - soldering point 1) R thJS 165K/W 1 For calculation of R thJA please refer to Application Note Thermal Resistance
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