BC857B (2) datasheet pdf

BC857A / BC857B / BC857C BC857A BC857B BC857C PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Parameter Value Units V CEO Coll ector-Emitt er Volt age 45 V V CBO Coll ector-Base Voltage 50 V V EBO Emitt er-Base Volt age 5.0 V I C Collector Current - Continuous 500 mA T J , T stg Operating and Storage Juncti on Temperatu re Range -55 to +150 ° C Symbol Characteristic Max Units *BC857A / B / C P D Total Device Dissipation Derate above 25 ° C 350 2.8 mW mW/ ° C R θ JA Thermal Resistance, Jun ction t o Ambient 357 ° C/W C B E SOT-23 Mark: 3E / 3F / 3G *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. ã1997 Fairchild Semiconductor Corporation

Specifications