BC857BWT1 datasheet pdf

General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. MAXIMUM RATINGS RatingSymbolBC856BC857BC858Unit Collector – Emitter VoltageV CEO –65–45–30V Collector – Base VoltageV CBO –80–50–30V Emitter – Base VoltageV EBO –5.0–5.0–5.0V Collector Current — ContinuousI C –100–100–100mAdc THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Total Device Dissipation FR– 5 Board, (1) T A = 25°C P D 150mW Thermal Resistance, Junction to Ambient R qJA 833°C/W Junction and Storage TemperatureT J , T stg – 55 to +150°C DEVICE MARKING BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3E; BC857BWT1 = 3F; BC858AWT1 = 3J; BC858BWT1 = 3K; BC858CWT1 = 3L ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) CharacteristicSymbolMinTypMaxUnit OFF CHARACTERISTICS Collector – Emitter Breakdown VoltageBC856 Series (I C = –10 mA)BC857 Series BC858 Series V (BR)CEO –65 –45 –30 — — — — — — V Collector – Emitter Breakdown VoltageBC856 Series (I C = –10 μA, V EB = 0)BC857 Series BC858 Series V (BR)CES –80 –50 –30 — — — — — — V Collector – Base Breakdown VoltageBC856 Series (I C = –10 mA)BC857 Series BC858 Series V (BR)CBO –80 –50 –30 — — — — — — V Emitter – Base Breakdown VoltageBC856 Series (I E = –1.0 mA)BC857 Series BC858 Series V (BR)EBO –5.0 –5.0 –5.0 — — — — — — V Collector Cutoff Current (V CB = –30 V) Collector Cutoff Current (V CB = –30 V, T A = 150°C) I CBO — — — — –15 –4.0 nA μA 1. FR–5 = 1.0 x 0.75 x 0.062 in Thermal Clad is a registered trademark of the Bergquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. Order this document by BC856AWT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1, CWT1 Motorola Preferred Devices CASE 419–02, STYLE 3 SOT–323/SC–70 1 2 3  Motorola, Inc. 1996 COLLECTOR 3 1 BASE 2 EMITTER