BC857CDW1T1 datasheet pdf

 Semiconductor Components Industries, LLC, 2000 February, 2000 – Rev. 0 1Publication Order Number: BC857BDW1T1/D BC857BDW1T1, BC857CDW1T1, BC858BDW1T1, BC858CDW1T1 Preferred Devices DualGeneralPurpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. •Device Marking: BC857BDW1T1 = 3F BC857CDW1T1 = 3G BC858BDW1T1 = 3K BC858CDW1T1 = 3L MAXIMUM RATINGS RatingSymbolBC857BC858Unit Collector – Emitter VoltageV CEO –45–30V Collector – Base VoltageV CBO –50–30V Emitter – Base VoltageV EBO –5.0–5.0V Collector Current — ContinuousI C –100–100mAdc THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Total Device Dissipation Per Device FR– 5 Board (1) T A = 25°C Derate Above 25°C P D 380 250 3.0 mW mW/°C Thermal Resistance, Junction to Ambient R q JA 328°C/W Junction and Storage Temperature Range T J , T stg – 55 to +150°C 1. FR–5 = 1.0 x 0.75 x 0.062 in DevicePackageShipping ORDERING INFORMATION BC857BDW1T1SOT–363 http://onsemi.com SOT–363/SC–88 CASE 419B STYLE 1 3000 Units/Reel DEVICE MARKING Preferred devices are recommended choices for future use and best overall value. BC857CDW1T1SOT–3633000 Units/Reel BC858BDW1T1SOT–3633000 Units/Reel BC858CDW1T1SOT–3633000 Units/Reel See Table Q 1 (1)(2) (3) (4)(5)(6) Q 2 1 2 3 6 5 4

Specifications