BC858B datasheet pdf

BC858BW / BC858B

Transistors Rev.A 1/4 PNP General Purpose Transistor BC858BW / BC858B

Specifications

zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Junction temperature Storage temperature Symbol V CBO VCEO VEBO IC Tj Tstg Limits −30 −30 −5 −0.1 0.35 150 −65 to +150 Unit V V V A Collector power dissipation P C 0.2 ̊C ̊C ∗ W ∗ When mounted on 7 × 5 × 0.6 mm ceramic board.

zElectrical characteristics (Ta=25°C) ParameterSymbolMin.Typ.Max.UnitConditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current BV CBO BVCEO BVEBO ICBO −30 −30 −5 − − − − − −− − − − 4 −100 V V V nA μA I C= −50μA I C= −1mA I E= −50μA V CB= −30V, Ta=150°C VCB= −30V − Base-emitter saturation voltageV BE(on) −0.6−−0.75V −−−0.65VI C/IB= −100mA/−5mA Collector-emitter saturation voltageV CE(sat) −−−0.3VIC/IB= −10mA/−0.5mA V CE/IC= −5V/−10mA V CE/IC= −5V/−2mADC current transfer ratiohFE210−480− Output capacitance f T Cob − − 250 4.5 − − MHz pF V CE= −5V , IE=20mA , f=100MHz V CB= −10V , IE=0 , f=1MHz Transition frequency

zElectrical characteristics curves 0 80 60 40 20 100 2 .0 0 1.0 I B =0mA 0.1 0.3 0.2 0.4 0.5 0.6 0.7 Ta=25 ̊C COLLECTOR CURRENT : I C (mA) COLLECTOR-EMITTER VOLTAGE : VCE(V) Fig.1 Grounded emitter output characteristics ( I )

0 8.0 6.0 4.0 2.0 10.0 2 .0 0 1.0 Ta=25 ̊C 1 B =0μA 5 10 15 20 25 30 35 40 45 50 COLLECTOR CURRENT : I C (mA) COLLECTOR-EMITTER VOLTAGE : VCE(V) Fig.2 Grounded emitter output characteristics ( II )