BC858CLT1 datasheet pdf

2–154Motorola Small–Signal Transistors, FETs and Diodes Device Data GeneralPurposeTransistors PNP Silicon MAXIMUM RATINGS RatingSymbolBC856BC857BC858Unit Collector – Emitter VoltageV CEO –65–45–30V Collector – Base VoltageV CBO –80–50–30V Emitter – Base VoltageV EBO –5.0–5.0–5.0V Collector Current — ContinuousI C –100–100–100mAdc THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Total Device Dissipation FR– 5 Board, (1) T A = 25°C Derate above 25°C P D 225 1.8 mW mW/°C Thermal Resistance, Junction to Ambient R qJA 556°C/W Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C P D 300 2.4 mW mW/°C Thermal Resistance, Junction to Ambient R qJA 417°C/W Junction and Storage TemperatureT J , T stg – 55 to +150°C DEVICE MARKING BC856ALT1 = 3A; BC856BLT1 = 3B; BC857ALT1 = 3E; BC857BLT1 = 3F; BC858ALT1 = 3J; BC858BLT1 = 3K; BC858CLT1 = 3L ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic SymbolMinTypMaxUnit OFF CHARACTERISTICS Collector – Emitter Breakdown VoltageBC856 Series (I C = –10 mA)BC857 Series BC858 Series V (BR)CEO –65 –45 –30 — — — — — — V Collector – Emitter Breakdown VoltageBC856 Series (I C = –10 μA, V EB = 0)BC857 Series BC858 Series V (BR)CES –80 –50 –30 — — — — — — V Collector – Base Breakdown VoltageBC856 Series (I C = –10 mA)BC857 Series BC858 Series V (BR)CBO –80 –50 –30 — — — — — — V Emitter – Base Breakdown VoltageBC856 Series (I E = –1.0 mA)BC857 Series BC858 Series V (BR)EBO –5.0 –5.0 –5.0 — — — — — — V Collector Cutoff Current (V CB = –30 V) Collector Cutoff Current (V CB = –30 V, T A = 150°C) I CBO — — — — –15 –4.0 nA μA 1. FR–5 = 1.0 x 0.75 x 0.062 in2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Preferred devices are Motorola recommended choices for future use and best overall value. MOTOROLA SEMICONDUCTOR TECHNICAL DATA BC856ALT1,BLT1 BC857ALT1,BLT1 BC858ALT1,BLT1, CLT1 Motorola Preferred Devices 1 2 3 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) COLLECTOR 3 1 BASE 2 EMITTER REV 1

Specifications