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BC856W ... BC859W BC856W ... BC859W PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren fĂŒr die OberflĂ€chenmontage PNP Version 2011-07-11 Dimensions - MaĂe [mm] 1 = B 2 = E 3 = C Power dissipation â Verlustleistung200 mW Plastic case KunststoffgehĂ€use SOT-323 Weight approx. â Gewicht ca.0.01 g Plastic material has UL classification 94V-0 GehĂ€usematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (T A = 25°C)Grenzwerte (T A = 25°C) BC856WBC857W BC858W BC859W Collector-Emitter-volt. â Kollektor-Emitter-SpannungB open- V CEO 65 V45 V30 V Collector-Base-voltage â Kollektor-Basis-SpannungE open- V CBO 80 V50 V30 V Emitter-Base-voltage â Emitter-Basis-SpannungC open- V EBO 5 V Power dissipation â VerlustleistungP tot 200 mW 1 ) Collector current â Kollektorstrom (dc)- I C 100 mA Peak Collector current â Kollektor-Spitzenstrom- I CM 200 mA Peak Base current â Basis-Spitzenstrom- I BM 200 mA Peak Emitter current â Emitter-SpitzenstromI EM 200 mA Junction temperature â Sperrschichttemperatur Storage temperature â Lagerungstemperatur T j T S -55...+150°C -55...+150°C Characteristics (T j = 25°C)Kennwerte (T j = 25°C) Min.Typ.Max. DC current gain â Kollektor-Basis-StromverhĂ€ltnis - V CE = 5 V, - I C = 10 ÎŒAGroup A Group B Group C H FE h FE h FE â â â 140 250 480 â â â - V CE = 5 V, - I C = 2 mAGroup A Group B Group C H FE h FE h FE 125 220 420 180 290 520 250 475 800 Collector-Emitter saturation voltage â Kollektor-SĂ€ttigungsspannung 2 ) - I C = 10 mA, - I B = 0.5 mA - I C = 100 mA, - I B = 5 mA - V CEsat - V CEsat â â 75 mV 250 mV 300 mV 650 mV 1Mounted on P.C. board with 3 mm 2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm 2 Kupferbelag (Lötpad) an jedem Anschluss 2Tested with pulses t p = 300 ÎŒs, duty cycle †2% â Gemessen mit Impulsen t p = 300 ÎŒs, SchaltverhĂ€ltnis †2% © Diotec Semiconductor AGhttp://www.diotec.com/1 1.3 0.3 1 . 2 5 ± 0 . 1 1 ±0.1 2 ±0.1 2 . 1 ± 0 . 1 Type Code 3 21
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