©2006 Fairchild Semiconductor Corporation1www.fairchildsemi.com
BC856- BC860 Rev. B
BC856- BC860 PNP Epitaxi
al Silicon Transistor
tm
August 2006
BC856- BC860
PNP Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits
• Low Noise: BC859, BC860
• Complement to BC846 ... BC850
Features
- • Switching and Amplifier Applications
- • Suitable for automatic insertion in thick and thin-film circuits
- • Low Noise: BC859, BC860
- • Complement to BC846 ... BC850
Specifications
Absolute Maximum Ratings* T
a
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
SymbolParameterValueUnits
V
CBO
Collector-Base Voltage
: BC856
: BC857/860
: BC858/859
-80
-50
-30
V
V
V
V
CEO
Collector-Emitter Voltage
: BC856
: BC857/860
: BC858/859
-65
-45
-30
V
V
V
V
EBO
Emitter-Base Voltage-5V
I
C
Collector Current (DC)-100mA
P
C
Collector Power Dissipation310mW
T
J
Junction Temperature150°C
T
STG
Storage Temperature-65 ~ 150°C
SymbolParameterTest ConditionMin.Typ.Max.Units
I
CBO
Collector Cut-off CurrentV
CB
= -30V, I
E
=0-15nA
h
FE
DC Current GainV
CE
= -5V, I
C
= -2mA110800
V
CE
(sat)Collector-Emitter Saturation VoltageI
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
-90
-250
-300
-650
mV
mV
V
BE
(sat)Base-Emitter Saturation VoltageI
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
-700
-900
mV
mV
V
BE
(on)Base-Emitter On VoltageV
CE
= -5V, I
C
= -2mA
V
CE
= -5V, I
C
= -10mA
-600-660-750
-800
mV
mV
f
T
Current Gain Bandwidth ProductV
CE
= -5V, I
C
= -10mA
f=100MHz
150MHz
C
ob
Output CapacitanceV
CB
= -10V, I
E
=0, f=1MHz6pF
NFNoise Figure
: BC856/857/858
: BC859/860
V
CE
= -5V, I
C
= -200μA
R
G
=2KΩ, f=1KHz
2
1
10
4
dB
dB
: BC859
: BC860
V
CE
= -5V, I
C
= -200μA
R
G
=2KΩ, f=30~15000Hz
1.2
1.2
4
2
dB
dB
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3