NPN Silicon Darlington Transistors BC 875
... BC 879
Low collector-emitter saturation voltage
Complementary types: BC 876, BC 878
BC 880 (PNP)
Specifications
Maximum Ratings
TypeOrdering CodeMarking
Package
1)
Pin Configuration
BC 875
BC 877
BC 879
C62702-C853
C62702-C854
C62702-C855
–TO-92
ECB
123
1)
For detailed information see chapter Package Outlines.
2)
If transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area for
the collector terminal, RthJA = 125 K/W and thus Ptot max = 1 W at TA = 25 ̊C.
3)
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
ParameterSymbolValuesUnit
Collector-emitter voltageV
CE0V
Peak collector currentICM
Collector currentICA
Junction temperatureTj ̊C
Total power dissipation, T
C = 90 ̊C
2)
PtotW
Storage temperature rangeT
stg
Collector-base voltageVCB0
Thermal Resistance
Junction - ambient
2)
Rth JA≤ 156K/W
1
2
0.8 (1)
150
– 65 ... + 150
Emitter-base voltageV
EB0
Base currentIBmA100
4560
6080
BC 875BC 877
Peak base currentI
BM200
80
100
BC 879
5
Junction - case
3)
Rth JC≤ 75