BCF30 (1) datasheet pdf

1 ) Mounted on P.C. board with 3 mm 2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm 2 Kupferbelag (Lötpad) an jedem Anschluß 2 ) Tested with pulses t p = 300
s, duty cycle
2% – Gemessen mit Impulsen t p = 300
s, Schaltverhältnis
2% 18 01.11.2003 2.5 max 1.3 ±0.1 1.1 2.9 ±0.1 0.4 1 2 3 Type Code 1.9 BCF 29, BFC 30General Purpose Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Power dissipation – Verlustleistung250 mW Plastic caseSOT-23 Kunststoffgehäuse(TO-236) Weight approx. – Gewicht ca.0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Dimensions / Maße in mm 1 = B2 = E3 = C Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (T A = 25
C)Grenzwerte (T A = 25
C) BCF 29, BCF 30 Collector-Emitter-voltageB open- V CE0 32 V Collector-Base-voltageE open- V CB0 32 V Emitter-Base-voltageC open- V EB0 5 V Power dissipation – VerlustleistungP tot 250 mW 1 ) Collector current – Kollektorstrom (DC)- I C 100 mA Peak Collector current – Kollektor-Spitzenstrom- I CM 200 mA Peak Base current – Basis-Spitzenstrom- I BM 100 mA Junction temperature – SperrschichttemperaturT j 150
C Storage temperature – LagerungstemperaturT S - 65...+ 150
C Characteristics (T j = 25
C)Kennwerte (T j = 25
C) Min.Typ.Max. Collector-Base cutoff current – Kollektorreststrom I E = 0, - V CB = 32 V- I CB0 ––100 nA I E = 0, - V CB = 32 V, T j = 100
C- I CB0 ––10
A Emitter-Base cutoff current – Emitterreststrom I C = 0, - V EB = 5 V- I EB0 ––100 nA Collector saturation volt. – Kollektor-Sättigungsspg. 2 ) - I C = 10 mA, - I B = 0.5 mA- V CEsat –80 mV300 mV - I C = 100 mA, - I B = 5 mA- V CEsat –150 mV– www.DataSheet4U.com

Specifications