BCM846S datasheet pdf

2011-10-051 BCM846S 1 6 2 3 5 4 NPN Silicon AF Transistor Array • Precision matched transistor pair: ∆I C ≤ 10% • For current mirror applications • Low collector-emitter saturation voltage • Two (galvanic) internal isolated Transistors • Complementary type: BCM856S • BCM846S: For orientation in reel see package information below • Pb-free (RoHS compliant) package • Qualified according AEC Q101 EHA07178 654 321 C1B2E2 C2B1E1 TR1 TR2 TypeMarkingPin ConfigurationPackage BCM846S1Ms 1=E12=B13=C24=E25=B26=C1SOT363 Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltageV CEO 65V Collector-emitter voltageV CES 80 Collector-base voltageV CBO 80 Emitter-base voltageV EBO 6 Collector currentI C 100mA Peak collector current, t p ≤ 10 msI CM 200 Total power dissipation- T S = 115 °C P tot 250mW Junction temperatureT j 150°C Storage temperatureT stg -65 ... 150

Specifications