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BCP52/53
MEDIUM POWER AMPLIFIER
ADVANCE DATA
nSILICON EPITAXIAL PLANAR PNP
TRANSISTORS
nMINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
nGENERAL PURPOSE MAINLY INTENDED
FOR USE IN MEDIUM POWER INDUSTRIAL
APPLICATION AND FOR AUDIO AMPLIFIER
OUTPUT STAGE
nNPN COMPLEMENTS ARE BCP55 AND
BCP56 RESPECTIVELY
Specifications
INTERNAL SCHEMATIC DIAGRAM
October 1997
ABSOLUTE MAXIMUM RATINGS
SymbolParameterValueUnit
BCP52BCP53
V
CBO
Collector-Base Voltage (I
E
= 0)-60-100V
V
CEO
Collector-Emitter Voltage (I
B
= 0)-60-80V
V
CER
Collector-Emitter Voltage (R
BE
= 1KΩ)-60-100V
V
EBO
Emitter-Base Voltage (I
C
= 0)-5V
I
C
Collector Current-1A
I
CM
Collector Peak Current (t
p
< 5 ms)-1.5A
I
B
Base Current-0.1A
I
BM
Base Peak Current (t
p
< ms)-0.2A
P
tot
Total Dissipation at T
c
= 25
o
C2W
T
stg
Storage Temperature-65 to 150
o
C
T
j
Max. Operating Junction Temperature150
o
C
1
2
2
3
SOT-223
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