1. Product profile
1.1 General description
NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
Features
- 1.2 Features and benefits
- 1.3 Applications
Specifications
[1]Pulse test: t
p
300s; = 0.02.
BCP55; BCX55; BC55PA
60 V, 1 A NPN medium power transistors
Rev. 8 — 24 October 2011Product data sheet
Table 1.Product overview
Type number
[1]
PackagePNP complement
NXPJEITAJEDEC
BCP55SOT223SC-73-BCP52
BCX55SOT89SC-62TO-243BCX52
BC55PASOT1061--BC52PA
Linear voltage regulatorsPower management
Low-side switchesMOSFET drivers
Battery-driven devicesAmplifiers
Table 2.Quick reference data
SymbolParameterConditionsMinTypMaxUnit
V
CEO
collector-emitter voltage open base--60V
I
C
collector current--1A
I
CM
peak collector currentsingle pulse; t
p
1ms--2A
h
FE
DC current gainV
CE
=2V; I
C
=150mA
[1]
63-250
h
FE
selection -10V
CE
=2V; I
C
=150mA
[1]
63-160
h
FE
selection -16V
CE
=2V; I
C
=150mA
[1]
100-250