BCP68T1 datasheet pdf

1 Motorola Small–Signal Transistors, FETs and Diodes Device Data NPN Silicon Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. •High Current: I C = 1.0 Amp •The SOT-223 Package can be soldered using wave or reflow. •SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die •Available in 12 mm Tape and Reel Use BCP68T1 to order the 7 inch/1000 unit reel. Use BCP68T3 to order the 13 inch/4000 unit reel. •The PNP Complement is BCP69T1 MAXIMUM RATINGS (T C = 25°C unless otherwise noted) Rating SymbolValueUnit Collector-Emitter VoltageV CEO 25Vdc Collector-Base VoltageV CBO 20Vdc Emitter-Base VoltageV EBO 5Vdc Collector CurrentI C 1Adc Total Power Dissipation @ T A = 25°C (1) Derate above 25°C P D 1.5 12 Watts mW/°C Operating and Storage Temperature RangeT J , T stg – 65 to 150°C DEVICE MARKING CA THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance — Junction-to-Ambient (surface mounted)R θJA 83.3°C/W Maximum Temperature for Soldering Purposes Time in Solder Bath T L 260 10 °C Sec 1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. Order this document by BCP68T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Motorola, Inc. 1996 BCP68T1 Motorola Preferred Device MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT CASE 318E-04, STYLE 1 TO-261AA 1 2 3 4 COLLECTOR 2,4 BASE 1 EMITTER 3 REV 1

Specifications