BCP69T1 datasheet pdf

1 Motorola Small–Signal Transistors, FETs and Diodes Device Data PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. •High Current: I C = –1.0 Amp •The SOT-223 Package can be soldered using wave or reflow. •SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die. •Available in 12 mm Tape and Reel Use BCP69T1 to order the 7 inch/1000 unit reel. Use BCP69T3 to order the 13 inch/4000 unit reel. •NPN Complement is BCP68 MAXIMUM RATINGS (T C = 25°C unless otherwise noted) Rating SymbolValueUnit Collector-Emitter VoltageV CEO –25Vdc Collector-Base VoltageV CBO –20Vdc Emitter-Base VoltageV EBO – 5.0Vdc Collector CurrentI C –1.0Adc Total Power Dissipation @ T A = 25°C (1) Derate above 25°C P D 1.5 12 Watts mW/°C Operating and Storage Temperature RangeT J , T stg – 65 to 150°C DEVICE MARKING CE THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance — Junction-to-Ambient (surface mounted)R θJA 83.3°C/W Lead Temperature for Soldering, 0.0625′′ from case Time in Solder Bath T L 260 10 °C Sec 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. Order this document by BCP69T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Motorola, Inc. 1996 BCP69T1 MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT Motorola Preferred Device CASE 318E-04, STYLE 1 TO-261AA 1 2 3 4 COLLECTOR 2,4 BASE 1 EMITTER 3 REV 2

Specifications