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BCP 71M Semiconductor Group Au -12-19981 NPN Silicon AF Power Transistor Preliminary data • Drain switch for RF power amplifier stages • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage VPW05980 1 2 3 5 4 TypeMarkingOrdering CodePin ConfigurationPackage BCP 71MPCsQ62702-C25971 = E2 = C3 = ESCT-5954 = B5 = C Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltage V CEO 32V Collector-base voltage V CBO 32 Emitter-base voltage V EBO 5 DC collector current I C 3A Peak collector current I CM 6 Base current200mA I B Peak base current I BM 500 Total power dissipation, T S ≤ 94 °CP tot 1.7W Junction temperature T j 150°C Storage temperature T stg -65...+150 Thermal Resistance Junction ambient 1) R thJA ≤ 88 K/W Junction - soldering point R thJS ≤ 33 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group11998-11-01