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BCP 72M Semiconductor Group Jun-05-19981 PNP Silicon AF Power Transistor Preliminary data • Drain switch for RF power amplifier stages • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage VPW05980 1 2 3 5 4 TypeMarkingOrdering CodePin ConfigurationPackage BCP 72MPAsQ62702-C25171 = E2 = C3 = ESCT-5954 = B5 = C Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltageV CEO 10V Collector-base voltageV CBO 10 Emitter-base voltageV EBO 5 DC collector currentI C 3A Peak collector currentI CM 6 Base current200mAI B Peak base currentI BM 500 Total power dissipation, T S ≤ 94 °CP tot 1.7W Junction temperatureT j 150°C Storage temperatureT stg -65...+150 Thermal Resistance Junction ambient 1) R thJA ≤ 88 K/W Junction - soldering pointR thJS ≤ 33 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group11998-11-01