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Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR08AS-8 LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE •IT (RMS)..................................................................... 0.8A •V DRM....................................................................... 400V •I FGT !, IRGT !, IRGT #............................................. 5mA •I FGT #..................................................................... 10mA BCR08AS-8 APPLICATION Hybrid IC, solid state relay, control of household equipment such as electric fan · washing machine, other general purpose control applications Symbol I T (RMS) ITSM I 2 t PGM PG (AV) VGM IGM Tj Tstg — Parameter RMS on-state current Surge on-state current I 2 t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Conditions Commercial frequency, sine full wave 360° conduction, T a=40°C ]4 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Unit A A A 2 s W W V A °C °C mg Ratings 0.8 8 0.26 1 0.1 6 1 –40 ~ +125 –40 ~ +125 48 Symbol V DRM VDSM Parameter Repetitive peak off-state voltage ]1 Non-repetitive peak off-state voltage ]1 Voltage class 8 (marked “B•”) 400 500 Unit V V MAXIMUM RATINGS ]1. Gate open. 2 1 3 1 2 3 T 1 TERMINAL T 2 TERMINAL GATE TERMINAL 4.4±0.1 1.5±0.1 1.6±0.2 0.4±0.07 0.8 MIN 2.5±0.1 3.9±0.3 0.4 +0.03 –0.05 1 2 3 (Back side) OUTLINE DRAWING Dimensions in mm SOT-89 0.5±0.07 1.5±0.1 1.5±0.1