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250 250 250 mW Junction temperatureT j 150°C Storage temperatureT stg -65 ... 150
Nov-27-2003 1 BCR101... NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R 1 = 100kΩ , R 2 = 100kΩ ) BCR101F/L3 BCR101T EHA07184 3 21 C EB R 1 R 2 TypeMarkingPin ConfigurationPackage BCR101F* BCR101L3* BCR101T* UCs UC UCs 1=B 1=B 1=B 2=E 2=E 2=E 3=C 3=C 3=C - - - - - - - - - TSFP-3 TSLP-3-4 SC75 *Preliminary Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltageV CEO 50V Collector-base voltageV CBO 50 Emitter-base voltageV EBO 10 Input on voltageV i(on) 50 Collector currentI C 50mA Total power dissipation- BCR101F, T S ≤ 128°C BCR101L3, T S ≤ 135°C BCR101T, T S ≤ 109°C P tot
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