BCR112 datasheet pdf

Semiconductor Group 1Nov-26-1996 BCR 112 NPN Silicon Digital Transistor • Switching circuit, inverter, inferface circuit, driver circuit • Built in bias resistor (R 1 =4.7k Ω , R 2 =4.7k Ω ) TypeMarkingOrdering CodePin ConfigurationPackage BCR 112WFsQ62702-C22541 = B2 = E3 = CSOT-23 Maximum Ratings ParameterSymbolValuesUnit Collector-emitter voltageV CEO 50V Collector-base voltageV CBO 50 Emitter-base voltageV EBO 10 Input on VoltageV i(on) 15 DC collector currentI C 100mA Total power dissipation, T S = 102°CP tot 200mW Junction temperatureT j 150°C Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction ambient 1) R thJA ≤ 350K/W Junction - soldering pointR thJS ≤ 240 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu

Specifications