BCR 135
Semiconductor Group
Jun-18-19971
NPN Silicon Digital Transistor
BCR 135
Semiconductor Group
Jun-18-19971
NPN Silicon Digital Transistor
Specifications
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (
R
1
=10kΩ, R
2
=47kΩ)
TypeMarkingOrdering CodePackagePin Configuration
SOT-23BCR 135WJsQ62702-C2257
1 = B2 = E3 = C
Maximum Ratings
Parameter
SymbolValueUnit
Collector-emitter voltageV
CEO
V50
50V
CBO
Collector-base voltage
Emitter-base voltage6V
EBO
Input on VoltageV
i(on)
20
100mAI
C
DC collector current
Total power dissipation, T
S
= 102 °CP
tot
mW200
Junction temperatureT
j
150°C
65...+150Storage temperatureT
stg
Thermal Resistance
Junction ambient
1)
≤ 350K/WR
thJA
Junction - soldering pointR
thJS
≤ 240
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm
2
Cu