BCR148S datasheet pdf

Semiconductor Group 1Nov-26-1996 BCR 148S NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvaniv) internal isolated Transistors driver circuit • Built in bias resistor (R 1 =47k Ω , R 2 =47K Ω ) TypeMarkingOrdering CodePin ConfigurationPackage BCR 148SWEsQ62702-C24171=E12=B13=C24=E25=B26=C1SOT-363 Maximum Ratings ParameterSymbolValuesUnit Collector-emitter voltageV CEO 50V Collector-base voltageV CBO 50 Emitter-base voltageV EBO 10 Input on VoltageV i(on) 50 DC collector currentI C 70mA Total power dissipation, T S = 115°CP tot 250mW Junction temperatureT j 150°C Storage temperatureT stg - 65 ... + 140 Thermal Resistance Junction ambient 1) R thJA ≤ 275K/W Junction - soldering pointR thJS ≤ 140 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu

Specifications