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250 250 250 mW Junction temperatureT j 150°C Storage temperatureT stg -65 ... 150
Nov-04-2003 1 BCR149... NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R 1 = 47kΩ) BCR149F/L3 BCR149T EHA07264 3 12 BE C 1 R TypeMarkingPin ConfigurationPackage BCR149F* BCR149L3* BCR149T* UAs UA UAs 1=B 1=B 1=B 2=E 2=E 2=E 3=C 3=C 3=C - - - - - - - - - TSFP-3 TSLP-3-4 SC75 * Preliminary Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltageV CEO 50V Collector-base voltageV CBO 50 Emitter-base voltageV EBO 5 Input on voltageV i(on) 50 Collector currentI C 70mA Total power dissipation- BCR149F, T S ≤ 128°C BCR149L3, T S ≤ 135°C BCR149T, T S ≤ 109°C P tot
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