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250 250 250 mW Junction temperatureT j 150°C Storage temperatureT stg -65 ... 150
Dec-09-2003 1 BCR151... PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R 1 = 100kΩ , R 2 = 100kΩ) BCR151F/L3 BCR151T EHA07183 3 21 C EB R 1 R 2 TypeMarkingPin ConfigurationPackage BCR151F* BCR151L3* BCR151T* UDs UD UDs 1=B 1=B 1=B 2=E 2=E 2=E 3=C 3=C 3=C - - - - - - - - - TSFP-3 TSLP-3-4 SC75 * Preliminary Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltageV CEO 50V Collector-base voltageV CBO 50 Emitter-base voltageV EBO 10 Input on voltageV i(on) 50 Collector currentI C 50mA Total power dissipation- BCR151F, T S ≤ 128°C BCR151L3, T S ≤ 135°C BCR151T, T S ≤ 109°C P tot