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Semiconductor Group 1Nov-26-1996 BCR 166W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R 1 =4.7k Ω , R 2 =47k Ω ) TypeMarkingOrdering CodePin ConfigurationPackage BCR 166WWTsUPON INQUIRY1=B2=E3=CSOT-323 Maximum Ratings ParameterSymbolValuesUnit Collector-emitter voltageV CEO 50V Collector-base voltageV CBO 50 Emitter-base voltageV EBO 5 Input on VoltageV i(on) 15 DC collector currentI C 100mA Total power dissipation, T S = 124°CP tot 250mW Junction temperatureT j 150°C Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction ambient 1) R thJA ≤ 240K/W Junction - soldering pointR thJS ≤ 105 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu
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