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BCR169U Dec-13-20011 PNP Silicon Digital Transistor Preliminary data Switching circuit, inverter, interface circuit, driver circuit Two ( galvanic) internal isolated Transistors with good matching in one package Built in bias resistor (R 1 = 4.7k) VPW09197 1 2 3 4 5 6 EHA07174 654 321 C1B2E2 C2B1E1 1 R R 2 R 1 R 2 TR1 TR2 TypeMarkingPin ConfigurationPackage BCR169UWSs1=E12=B13=C24=E25=B26=C1 SC74 Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltageV CEO 50V Collector-base voltageV CBO 50 Emitter-base voltageV EBO 5 Input on VoltageV i(on) 15 DC collector currentI C 100mA Total power dissipation, T S = 118 °C P tot 250mW Junction temperatureT j 150°C Storage temperatureT stg -65 ... 150 Thermal Resistance Junction - soldering point 1) R thJS 130K/W 1 For calculation of R thJA please refer to Application Note Thermal Resistance