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Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR16UM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE BCR16UM APPLICATION Light dimmer ¡I T (RMS)...................................................................... 16A ¡V DRM..............................................................400V/600V ¡I FGT !, IRGT !, IRGT #........................................... 15mA ¡V iso........................................................................ 1500V Symbol V DRM VDSM Parameter Repetitive peak off-state voltage ]1 Non-repetitive peak off-state voltage ]1 Voltage class Unit V V MAXIMUM RATINGS 8 400 500 12 600 720 ]1. Gate open. Symbol I T (RMS) ITSM I 2 t PGM PG (AV) VGM IGM Tj Tstg — V iso Parameter RMS on-state current Surge on-state current I 2 t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Isolation voltage Conditions Commercial frequency, sine full wave 360° conduction, T c=79°C ]3 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value T a=25°C, AC 1 minute, T1 · T2 · G terminal to case Unit A A A 2 s W W V A °C °C g V Ratings 16 170 121 5 0.5 10 2 –40 ~ +125 –40 ~ +125 2.3 1500 TYPE NAME VOLTAGE CLASS ] Measurement point of case temperature OUTLINE DRAWING Dimensions in mm TO-220 À À Á Á Â ÀÁÂ Â T1TERMINAL T 2TERMINAL GATE TERMINAL ] 4.5 2.54 2.54 1.27 0.6 10.2 0.8 1.4 φ3.8 ± 0.2 2.6 ± 0.4 13.0 MIN 4.2 MAX 15.5 2.8 ± 0.2 4.5